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MOSFET dosimetry for microbeam radiation therapy at the European Synchrotron Radiation Facility

机译:欧洲同步辐射设施中用于微束辐射治疗的MOSFET剂量学

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摘要

Preclinical experiments are carried out with ~20–30 μm wide, ~10 mm high parallel microbeams of hard, broad-‘‘white’’-spectrum x rays (~50–600 keV) to investigate microbeam radiation therapy (MRT) of brain tumors in infants for whom other kinds of radiotherapy are inadequate and/or unsafe. Novel physical microdosimetry (implemented with MOSFET chips in the ‘‘edge-on’’ mode) and Monte Carlo computer-simulated dosimetry are described here for selected points in the peak and valley regions of a microbeam-irradiated tissue-equivalent phantom. Such microbeam irradiation causes minimal damage to normal tissues, possible because of rapid repair of their microscopic lesions. Radiation damage from an array of parallel microbeams tends to correlate with the range of peak-valley dose ratios (PVDR). This paper summarizes comparisons of our dosimetric MOSFET measurements with Monte Carlo calculations. Peak doses at depths \u3c22 mm are 18% less than Monte Carlo values, whereas those depths \u3e22 mm and valley doses at all depths investigated (2 mm–62 mm) are within 2–13% of the Monte Carlo values. These results lend credence to the use of MOSFET detector systems in edge-on mode for microplanar irradiation dosimetry.
机译:临床前实验是使用〜20–30μm宽,〜10 mm高的平行,硬的,宽阔的“白色”光谱x射线(〜50–600 keV)微束进行的,以研究大脑的微束放射疗法(MRT)其他类型的放射治疗不足和/或不安全的婴儿的肿瘤。本文介绍了针对微束辐照组织等效体模的峰和谷区域中选定点的新型物理微剂量学(在“边沿”模式下以MOSFET芯片实现)和蒙特卡洛计算机模拟的剂量学。这种微束辐射对正常组织的损害最小,这可能是由于其微观病变的快速修复所致。一系列平行微束的辐射损伤往往与峰谷剂量比(PVDR)的范围相关。本文总结了我们的剂量MOSFET测量与蒙特卡洛计算的比较。深度处的峰值剂量比蒙特卡洛值低18%,而在所有调查深度(2mm至62mm)处的深度和谷值剂量均在蒙特卡洛值的2%至13%之内。这些结果证明了在边缘开启模式下将MOSFET检测器系统用于微平面辐射剂量测定法的使用。

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